Semiconductor device and method for manufacturing same
US9368351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2013 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Feb 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
[Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device.[Solution Means] A semiconductor device 1 has an MIS structure including an SiC epitaxial layer 3, a gate insulating film 9 and a gate electrode 10 formed on the gate insulating film 9. A gate insulating film 9 includes a silicon oxide film in contact with the SiC epitaxial layer 3. In the MIS structure, an area density QM of positive mobile ions in the gate insulating film 9 is made no more than 1×1012 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.