Etching gas and etching method
US9368363B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 14, 2012 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond and/or ether linkage, and including a bromine atom, and a plasma etching method comprising subjecting a silicon oxide film on a substrate to plasma etching through a mask using a process gas, the process gas being the plasma etching gas. This plasma etching gas exhibits excellent etching selectivity, and has a short atmospheric lifetime and a low environmental impact. This plasma etching method makes it possible to selectively subject a silicon oxide film to plasma etching at a high etching rate without causing an increase in surface roughness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.