Direct connected silicon controlled rectifier (SCR) having internal trigger
US9368486B2 · kind B2 · utility
22Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Feb 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/80
Abstract
In one aspect, a direct connected silicon control rectifier (DCSCR) includes a substrate having a semiconductor surface, a parasitic PNP bipolar transistor and a parasitic NPN bipolar transistor formed in the semiconductor surface. The parasitic PNP bipolar transistor includes a p+ emitter, an nbase and a pcollector and the parasitic NPN bipolar includes an n+ emitter, a pbase and an ncollector. The DCSCR also includes an electrically conductive line connecting an n+ contact to the nbase to a p+ contact to the pbase so that the nbase and the pbase are shorted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.