Semiconductor device with atom diffusion barrier layer and method of manufacturing semiconductor device with atom diffusion barrier layer
US9368539B2 · kind B2 · utility
4Cited by
16References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Feb 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.