Gallium nitride power semiconductor device having a vertical structure

US9368584B2 · kind B2 · utility

Assignee

• VISHAY GENERAL SEMICONDUCTOR, LLC · US

Inventors

• Max Chen · San Mateo, US
• Yih-Yin Lin · Taipei, TW

Key dates

• Filing date: Jul 9, 2013
• Grant date: Jun 14, 2016
• Expiry date: Oct 20, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/20

Abstract

A semiconductor device includes a substrate having first and second sides and a first active layer disposed over the first side of the substrate. A second active layer is disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. At least one trench extends through the first and second active layers and the two-dimensional electron gas layer and into the substrate. A conductive material lines the trench. A first electrode is disposed on the second active layer and a second electrode is disposed on the second side of the substrate.