Thin film transistor and manufacturing method thereof, array substrate and display device

US9368637B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Li Zhang · Inagi, JP
• Chunsheng Jiang · Tangxia, CN
• Dongfang Wang · Lexington, US
• Haijing Chen · Beijing, CN
• Fengjuan Liu · Beijing, CN

Key dates

• Filing date: Jul 15, 2013
• Grant date: Jun 14, 2016
• Expiry date: Jul 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.