Active diode having no gate and no shallow trench isolation

US9368648B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Reza Jalilizeinali · San Diego, US
• Eugene R. Worley · Irvine, US
• Evan Siansuri · San Diego, US
• Sreeker Dundigal · San Diego, US

Key dates

• Filing date: Mar 31, 2010
• Grant date: Jun 14, 2016
• Expiry date: Jun 10, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126

Abstract

An active diode with fast turn-on time, low capacitance, and low turn-on resistance may be manufactured without a gate and without a shallow trench isolation region between doped regions of the diode. A short conduction path in the active diode allows a fast turn-on time, and a lack of gate oxide reduces susceptibility of the active diode to extreme voltages. The active diode may be implemented in integrated circuits to prevent and reduce damage from electrostatic discharge (ESD) events. Manufacturing the active diode is accomplished by depositing a salicide block between doped regions of the diode before salicidation. After the salicide layers are formed on the doped regions, the salicide block is removed.