Solar cell with reduced absorber thickness and reduced back surface recombination

US9368666B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Hans-Juergen Eickelmann · Mainz, DE
• Michael Haag · Boulder, US
• Ruediger Kellmann · Mainz, DE
• Markus Schmidt · Seibersbach, DE
• Johannes Windeln · Bodenheim, DE

Key dates

• Filing date: Mar 4, 2015
• Grant date: Jun 14, 2016
• Expiry date: Mar 4, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.