Printable inorganic semiconductor method
US9368683B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Jul 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making an inorganic semiconductor structure suitable for micro-transfer printing includes providing a growth substrate and forming one or more semiconductor layers on the growth substrate. A patterned release layer is formed on the conductor layer(s) and bonded to a handle substrate. The growth substrate is removed and the semiconductor layer(s) patterned to form a semiconductor mesa. A dielectric layer is formed and then patterned to expose first and second contacts and an entry portion of the release layer. A conductor layer is formed on the dielectric layer, the first contact, and the second contact and patterned to form a first conductor in electrical contact with the first contact and a second conductor in electrical contact with the second contact but electrically separate from the first conductor. At least a portion of the release layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.