Semiconductor structure having nanocrystalline core and nanocrystalline shell paring with compositional transition layer
US9368693B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 11, 2013 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Oct 11, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.