Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet
US9371234B2 · kind B2 · utility
12Cited by
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9Claims
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Key dates
| Filing date | Jul 15, 2011 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Oct 30, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.