Method for structuring a surface by means of reactive ion-beam etching, structured surface and uses
US9371251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2010 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Nov 11, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material by reactive-ion etching, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple silicon oxide or a mixed silicon oxide, most of the oxides in the case of a mixed oxide being silicon oxide, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the silicon of the oxide, a molar percentage of the species in the material ranging from 1 mol % or even up to 50 mol % while remaining below the percentage of the silicon oxide, at least most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the etching; structuring the surface of the hybrid material, without masking, with etching that lasts less than 30 minutes over an etching area greater than 1 cm2, until the array of features is formed, the structuring optionally being accompanied by heating of the hybrid material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.