Transistor assembly as an ESD protection measure

US9373614B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Frederic Roger · Santa Clara, US
• Wolfgang Reinprecht · Tobelbad, AT

Key dates

• Filing date: Jan 10, 2011
• Grant date: Jun 21, 2016
• Expiry date: Feb 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A diode (23) is arranged near a transistor (25) to protect from ESD. The diode comprises a well (5) of a first conductivity type and a doped region (4) of a second conductivity type in opposition to the first conductivity type. The transistor comprises a doped well (2) and a doped region (1) of the first conductivity type. The well (2) of the transistor is doped lower than the well (5) of the diode.