Plasma-assisted techniques for fabricating semiconductor devices
US9373742B2 · kind B2 · utility
1Cited by
3References
9Claims
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Key dates
| Filing date | Mar 6, 2015 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Mar 6, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plasma-assisted techniques are provided for fabricating semiconductor devices. In one aspect, a plasma is applied to a substrate before exfoliating layers of a multi-layer structure of atomically thin two-dimensional sheets onto the substrate. The exfoliated layers serve as the basis for constructing a semiconductor device. In another aspect, a p-n junction is formed by applying a plasma to top layers of a multi-layer structure of atomically thin two-dimensional sheets and then exfoliating a portion of the multi-layer structure onto a bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.