Method for producing an optoelectronic component

US9373747B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Joachim Hertkorn · Neukirchen, DE
• Tetsuya Taki · Miyoshi, JP
• Karl Engl · Niedergebraching, DE
• Johannes Baur · Regensburg, DE
• Berthold Hahn · Hemau, DE
• Volker Haerle · Waldetzenberg, DE

Key dates

• Filing date: Sep 12, 2012
• Grant date: Jun 21, 2016
• Expiry date: Sep 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing an optoelectronic component is provided. A transfer layer, containing InxGa1-xN with 0<x<1, is grown onto a growth substrate. Subsequently, ions are implanted into the transfer layer to form a separation zone, a carrier substrate is applied, and the transfer layer is separated by way of heat treatment. A further transfer layer, containing InyGa1-yN with 0<y≦1 and y>x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.