Piezoelectric thin film resonator
US9374060B2 · kind B2 · utility
5Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 25, 2013 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Dec 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/853
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric thin film resonator includes: a substrate; a piezoelectric film that is located on the substrate and includes a first film made of an aluminum nitride film containing an additive element and second films located on an upper surface and a lower surface of the first film and made of an aluminum nitride film containing the additive element at a concentration lower than that of the first film; and a lower electrode and an upper electrode that are located to sandwich the piezoelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.