High-power sputtering source
US9376745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.