Apparatus for performing a plasma chemical vapour deposition process
US9376753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2012 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Aug 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32256
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to an apparatus for performing a plasma chemical vapor deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity having a substantially rotational symmetric shape with respect to a cylindrical axis. The resonator further includes side wall portions bounding the resonant cavity in opposite cylindrical axis directions. In addition, the apparatus comprises a microwave guide extending through the outer cylindrical wall into the resonant cavity. The length of the resonant cavity in the cylindrical direction varies as a function of the radial distance to the cylindrical axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.