Weir for improved crystal growth in a continuous Czochralski process
US9376762B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Nov 29, 2012 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Apr 21, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1052
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.