Method for manufacturing pattern using chemically amplified resist
US9377687B2 · kind B2 · utility
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4References
13Claims
0Family size
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Key dates
| Filing date | Jun 4, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jul 3, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G77/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a pattern includes forming a pattern material layer on a substrate, forming a protective layer on the pattern material layer, forming a resist layer on the protective layer, selectively exposing the resist layer to light, and developing the selectively exposed resist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.