Stable memory source bias over temperature and method
US9378805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2012 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Random access memory having a plurality of memory cells, each of the plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature and a bias circuit operatively coupled to at least one of the plurality of memory cells, the bias circuit being configured to generate a bias voltage for the at least one of the plurality of memory cells. The bias circuit has a second electrical characteristic being variable based, at least in part, on temperature. The first electrical characteristic is approximately proportional to the second electrical characteristic over a predetermined range of temperatures, the predetermined range of temperatures being greater than zero. The bias voltage on each of the plurality of memory cells is approximately proportional with variations in the first electrical characteristic over the predetermined range of temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.