Methods of operating variable resistance memory devices
US9378811B2 · kind B2 · utility
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8References
18Claims
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Key dates
| Filing date | Sep 9, 2013 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Sep 10, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.