Variable resistance nonvolatile memory element writing method and variable resistance nonvolatile memory device
US9378817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Feb 11, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance nonvolatile memory element writing method of, by applying a voltage pulse to a memory cell including a variable resistance element, reversibly changing the variable resistance element between a first resistance state and a second resistance state according to a polarity of the applied voltage pulse is provided. The variable resistance nonvolatile memory element writing method includes applying a first preliminary voltage pulse and subsequently applying the first voltage pulse to the variable resistance element to change the variable resistance element from the second resistance state to the first resistance state, the first preliminary voltage pulse being smaller in voltage absolute value than the second threshold voltage and different in polarity from the first voltage pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.