Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
US9378821B1 · kind B1 · utility
4Cited by
9References
14Claims
0Family size
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Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Mar 18, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods of pulse shaping a pulse signal for programming and erasing a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory cell are described. In one method a pulse shape of a pulse signal is controlled to include four or more phases for programming or erasing a SONOS memory cell. A write cycle is performed to program or erase the SONOS memory with the pulse signal with the four or more phases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.