Electron beam lithography methods including time division multiplex loading
US9378926B2 · kind B2 · utility
10Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jan 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31762
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An embodiment of a method of lithography includes generating a beam of electrons. A first pixel and a second pixel are each configured to pattern the beam. Using time domain multiplex loading, the first and second pixels are controlled such that the beam is patterned. The patterning includes receiving a first clock signal and using the first clock signal to generate a second clock signal and a third clock signal. The second clock signal is sent to the first pixel and sending the third clock signal is sent to the second pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.