Method for preparing polycrystalline metal oxide pattern
US9378953B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 29, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Oct 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02686
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for preparing a polycrystalline metal oxide pattern, characterized by comprising: annealing a predetermined region of an amorphous metal oxide film by laser, so as to convert the amorphous metal oxide in the predetermined region into a polycrystalline metal oxide; and etching the amorphous metal oxide outside of the predetermined region so as to remove it. By the method according to the present invention, firstly, the predetermined region of an amorphous metal oxide film is annealed by laser so as to convert the amorphous metal oxide into a polycrystalline metal oxide, and then, the amorphous metal oxide outside of the predetermined region is etched away, thereby a polycrystalline metal oxide pattern is formed. The method for preparing a polycrystalline metal oxide pattern according to the present invention is simple, and can effectively shorten the production period and save production costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.