Silicide formation on a wafer
US9379020B2 · kind B2 · utility
0Cited by
9References
8Claims
0Family size
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Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selective formation of silicide on a semiconductor wafer, wherein the metal layer is deposited over the entire wafer prior to application of the SiProt mask such that any etching of the mask does not cause any surface deterioration of the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.