Method and system for transient voltage suppression
US9379189B2 · kind B2 · utility
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18References
15Claims
0Family size
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Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transient voltage suppression (TVS) device includes a first layer of wide band gap semiconductor material formed of a first conductivity type material, a second layer of wide band gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer and comprising an ion implanted material structure between 0.1 micrometers (μm) and 22.0 μm thick, the second layer operating using punch-through physics, and a third layer of wide band gap semiconductor material formed of the first conductivity type material over at least a portion of the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.