Crystalline multilayer structure and semiconductor device
US9379190B2 · kind B2 · utility
3Cited by
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13Claims
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Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Dec 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.