Semiconductor device

US9379192B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventors

• Daigo Ito · Yokohama, JP
• Kazuya Hanaoka · Yokohama, JP

Key dates

• Filing date: Dec 17, 2014
• Grant date: Jun 28, 2016
• Expiry date: Dec 17, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a source electrode layer and a drain electrode layer which are electrically connected to an oxide semiconductor layer, a gate insulating film over the oxide semiconductor layer; the source electrode layer, and the drain electrode layer; and a gate electrode layer that overlaps with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer with the gate insulating film positioned therebetween. The source electrode layer and the drain electrode layer each include a first conductive layer and a second conductive layer. The first conductive layer is in contact with a top surface of the oxide semiconductor layer. The second conductive layer is in contact with a side surface of the oxide semiconductor layer. The first conductive layer and the second conductive layer are electrically connected to each other.