Semiconductor device and fabrication method thereof
US9379206B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Nov 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device fabrication method is provided in which recesses are formed at source/drain positions in the substrate, removable sidewalls are formed on side walls of the recess, and the recesses then are etched to form Sigma shaped recesses. Selective epitaxial growth of substantially un-doped SiGe in the Sigma shaped recesses is performed, and the Sigma shaped recesses close to the surface of the substrate can be protected from epitaxial growth by the removable sidewalls. Epitaxial growth of SiGe doped with a P-type impurity can be performed in the Sigma shaped recesses after removing the sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.