Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatus
US9379229B2 · kind B2 · utility
2Cited by
3References
9Claims
0Family size
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Inventor
Key dates
| Filing date | Feb 23, 2012 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jul 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes a substrate, a semiconductor layer formed above the substrate and including a nitride semiconductor, an electrode formed above the semiconductor layer and including gold, a barrier film formed above the electrode and a protection film formed above the semiconductor layer and including one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film. The protection film is formed on the barrier film. The barrier film includes a metal oxide material, a metal nitride film, or a metal oxynitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.