High mobility stabile metal oxide TFT
US9379247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2012 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Sep 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.