Variable range photodetector and method thereof

US9379271B2 · kind B2 · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Paul H. Shen · North Potomac, US
• Lee Ellen Rodak · Montgomery Village, US
• Chad Stephen Gallinat · Washington, US
• Anand Sampath · Corona, US
• Michael Wraback · Germantown, US

Key dates

• Filing date: May 23, 2014
• Grant date: Jun 28, 2016
• Expiry date: Jul 21, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.