Patent · US Active

Optoelectronic semiconductor chip, and light source comprising the optoelectronic semiconductor chip

US9379286B2 · kind B2 · utility

16Cited by
2References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 2013
Grant dateJun 28, 2016
Priority date
Expiry dateSep 6, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002

Abstract

An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.