Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same
US9379288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.