High voltage bootstrap gate driving apparatus
US9379696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jun 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.