Oxygen-free atomic layer deposition of indium sulfide

US9382618B2 · kind B2 · utility

Assignee

• UCHICAGO ARGONNE, LLC · US

Inventors

• Alex B. Martinson · Evanston, US
• Adam S. Hock · Cambridge, US
• Robert McCarthy · Boise, US
• Matthew Scott Weimer · Portland, US

Key dates

• Filing date: Jul 18, 2014
• Grant date: Jul 5, 2016
• Expiry date: Dec 5, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45553
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for synthesizing an In(III) N,N′-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately −30° C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N′-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.