Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays
US9383452B2 · kind B2 · utility
1Cited by
3References
3Claims
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Key dates
| Filing date | Oct 24, 2012 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jan 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/2928
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.