Semiconductor device and method of manufacturing the same
US9385007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2012 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jul 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.