Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the same
US9385081B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 4, 2015 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Mar 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A connective structure for bonding semiconductor devices and methods for forming the same are provided. The bonding structure includes an alpad structure, i.e., a thick aluminum-containing connective pad, and a substructure beneath the aluminum-containing pad that includes at least a pre-metal layer and a barrier layer. The pre-metal layer is a dense material layer and includes a density greater than the barrier layer and is a low surface roughness film. The high density pre-metal layer prevents plasma damage from producing charges in underlying dielectric materials or destroying subjacent semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.