Interconnects with fully clad lines

US9385085B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Manish Chandhok · Beaverton, US
• Hui Jae Yoo · Hillsboro, US
• Christopher J. Jezewski · Portland, US
• Ramanan V. Chebiam · Hillsboro, US
• Colin T. Carver · Hillsboro, US

Key dates

• Filing date: Sep 16, 2015
• Grant date: Jul 5, 2016
• Expiry date: Sep 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer.