Patent · US Active

Alignment mark recovery with reduced topography

US9385089B2 · kind B2 · utility

0Cited by
6References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 30, 2013
Grant dateJul 5, 2016
Priority date
Expiry dateJan 30, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.