Memory devices including vertical pillars and methods of manufacturing and operating the same
US9385138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2014 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Oct 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device and a method of forming such a device, the semiconductor device comprises a substrate of semiconductor material extending in a horizontal direction. A plurality of interlayer dielectric layers is provided on the substrate. A plurality of gate patterns is provided, each gate pattern between a neighboring lower interlayer dielectric layer and a neighboring upper interlayer dielectric layer. A vertical channel of semiconductor material extends in a vertical direction through the plurality of interlayer dielectric layers and the plurality of gate patterns, a gate insulating layer between each gate pattern and the vertical channel that insulates the gate pattern from the vertical channel, the vertical channel being in contact with the substrate at a contact region that comprises a semiconducting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.