Addressable SiOX memory array with incorporated diodes

US9385163B2 · kind B2 · utility

Assignees

• William Marsh Rice University · US
• Nanyang Technological University · SG

Inventors

• James M. Tour · Bellaire, US
• Jun Yao · San Ramon, US
• Jian Lin · San Diego, US
• Gunuk Wang · Houston, US
• Krishna Palem · Houston, US

Key dates

• Filing date: Aug 27, 2012
• Grant date: Jul 5, 2016
• Expiry date: Sep 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/883

Abstract

Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.