Method for manufacturing semiconductor device
US9385212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming, on a substrate, a plurality of fins extending along a first direction; forming, on the fins, a dummy gate stack extending along a second direction; forming a gate spacer on opposite sides of the dummy gate stack in the first direction; epitaxially growing raised source/drain regions on the top of the fins on opposite sides of the gate spacer in the first direction; performing lightly-doping ion implantation through the raised source/drain regions with the gate spacer as a mask, to form source/drain extension regions in the fins on opposite sides of the gate spacer in the first direction; removing the dummy gate stack to form a gate trench; and forming a gate stack in the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.