Optoelectronic semiconductor device with protective and reflective sheaths

US9385258B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Thomas Schlereth · Pentling, DE
• Stephan Kaiser · Regensburg, DE
• Alexander Linkov · Regensburg, DE

Key dates

• Filing date: Feb 8, 2013
• Grant date: Jul 5, 2016
• Expiry date: Feb 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/855

Abstract

An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.