Patent · US Active

Method for producing a dopant profile

US9385263B2 · kind B2 · utility

0Cited by

9References

19Claims

0Family size

Assignee

SCHOTT SOLAR AG · DE

Inventors

Joerg Horzel · Glückstadt, DE
Dieter Franke · Munich, DE
Gabriele Blendin · Gelnhausen, DE
Marco Faber · Mainz, DE
Wilfried Schmidt · Mössingen, DE

Key dates

Filing date	Dec 3, 2009
Grant date	Jul 5, 2016
Priority date	—
Expiry date	Dec 8, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.