Semiconductor epitaxial structure and light-emitting device thereof
US9385269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | May 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/17
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses an epitaxial structure for semiconductor light-emitting device, comprising an electron injection region, a hole injection region, a multi-quantum well active region, a potential barrier layer for blocking carriers, and one or more band edge shaping layers. The doping type and/or doping concentration of said band edge shaping layers are different from those of the adjacent layers. It may trim the band edge shape of the semiconductor energy band through the local built-in electric field formed as a result of adjusting the doping type, doping concentration and/or layer thickness thereof, such that the carriers in the multi-quantum well active region are distributed uniformly, the overall Auger recombination is decreased, and the effective potential barrier height of the potential barrier layer for blocking carriers is increased to reduce the drain current formed by carriers overflowing out of the multi-quantum well active region, thereby improving internal quantum efficiency. The present invention further discloses a semiconductor light-emitting device that employs said epitaxial structure, which similarly achieves the effects of reduced Auger recombina…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.