Optoelectronic device and the manufacturing method thereof
US9385272B2 · kind B2 · utility
1Cited by
8References
16Claims
0Family size
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Key dates
| Filing date | Sep 11, 2015 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Sep 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.